With the aid of baffle movement , a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time . the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films , which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure . such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films , and which are considered to induce the lower - energy electrons to participate in the photoemission
2.
The pixel size of p + / n - well / p - sub structure is 100 umx 100 n m , fill factor is 77 . 6 % . it can obtain target information with illuminance intensity in the range of 0 . 011x ~ 98 , 0001x , and the sensor photoelectric sensitivity is 35v / lx ? s . when the method of changeable reset frequency double scanning is used , the photoelectric dynamic range can be 139 . 8db , which is high in the 0 . 6 um level cmos image sensors already reported
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